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BSH205G2R

BSH205G2R
Mfr. #:
BSH205G2R
メーカー:
Nexperia
説明:
MOSFET P-CH 20V 2A SOT23
ライフサイクル:
メーカー新製品
データシート:
BSH205G2R データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
BSH205G2R 詳しくは
製品属性
属性値
メーカー
NXPセミコンダクターズ
製品カテゴリ
FET-シングル
シリーズ
-
包装
Digi-ReelR代替パッケージ
取り付けスタイル
SMD / SMT
パッケージ-ケース
TO-236-3, SC-59, SOT-23-3
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
1 Channel
サプライヤー-デバイス-パッケージ
TO-236AB
構成
独身
FETタイプ
MOSFET Pチャネル、金属酸化物
パワーマックス
480mW
トランジスタタイプ
1 P-Channel
Drain-to-Source-Voltage-Vdss
20V
入力-静電容量-Ciss-Vds
418pF @ 10V
FET機能
標準
Current-Continuous-Drain-Id-25°C
2A (Ta)
Rds-On-Max-Id-Vgs
170 mOhm @ 2A, 4.5V
Vgs-th-Max-Id
950mV @ 250μA
ゲートチャージ-Qg-Vgs
6.5nC @ 4.5V
Pd-電力損失
890 mW
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
16 ns
立ち上がり時間
14 ns
Vgs-Gate-Source-Voltage
8 V
Id-連続-ドレイン-電流
- 2.3 A
Vds-ドレイン-ソース-ブレークダウン-電圧
- 20 V
Vgs-th-Gate-Source-Threshold-Voltage
- 950 mV
Rds-On-Drain-Source-Resistance
120 mOhms
トランジスタ-極性
Pチャネル
典型的なターンオフ遅延時間
43 ns
典型的なターンオン遅延時間
5 ns
Qg-Gate-Charge
3.7 nC
フォワード-相互コンダクタンス-最小
4.5 S
チャネルモード
強化
Tags
BSH205G, BSH205, BSH20, BSH2, BSH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSH205G2 Series 20 V 2 A 170 mOhm SMT P-Channel TrenchMOS FET - SOT-23
***peria
BSH205G2 - 20 V, P-channel Trench MOSFET
***et Europe
Trans MOSFET P-CH 20V 2.3A 3-Pin TO-263AB T/R
***ment14 APAC
MOSFET, P-CH, -20V, -2A, TO236AB
***ark
Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:480mW; No. of Pins:3Pins RoHS Compliant: Yes
BSH205G2 20V P-Channel Trench MOSFET
Nexperia BSH205G2 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The device employs Trench MOSFET technology and offers a low threshold voltage with very fast switching. The BSH205G2 MOSFET is ideal for applications like relay drivers, high-speed line drivers and switching circuits.
モデル メーカー 説明 ストック 価格
BSH205G2R
DISTI # V72:2272_06519090		NexperiaTrans MOSFET P-CH 20V 2A 3-Pin TO-236AB T/R
RoHS: Compliant		2118
  • 1000:$0.0873
  • 500:$0.1190
  • 250:$0.1204
  • 100:$0.1216
  • 25:$0.2744
  • 10:$0.2887
  • 1:$0.4560
BSH205G2R
DISTI # 1727-2247-1-ND		NexperiaMOSFET P-CH 20V 2A SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		29329In Stock
  • 1000:$0.1108
  • 500:$0.1445
  • 100:$0.2552
  • 10:$0.4330
  • 1:$0.6000
BSH205G2R
DISTI # 1727-2247-6-ND		NexperiaMOSFET P-CH 20V 2A SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		29329In Stock
  • 1000:$0.1108
  • 500:$0.1445
  • 100:$0.2552
  • 10:$0.4330
  • 1:$0.6000
BSH205G2R
DISTI # 1727-2247-2-ND		NexperiaMOSFET P-CH 20V 2A SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		27000In Stock
  • 3000:$0.0935
BSH205G2R
DISTI # C1S537101330515		NexperiaMOSFETs
RoHS: Compliant		2155
  • 1000:$0.0592
  • 500:$0.0679
  • 200:$0.0830
  • 100:$0.1010
  • 50:$0.1910
  • 25:$0.2360
BSH205G2R
DISTI # C1S548200010510		NexperiaMOSFETs
RoHS: Compliant		2975
  • 1000:$0.0733
  • 500:$0.0840
  • 200:$0.1020
  • 100:$0.1250
  • 50:$0.2110
  • 25:$0.2610
BSH205G2R
DISTI # C1S537101330588		NexperiaMOSFETs
RoHS: Compliant		9000
  • 3000:$0.0928
BSH205G2R
DISTI # 26605872		NexperiaTrans MOSFET P-CH 20V 2A 3-Pin TO-236AB T/R
RoHS: Compliant		2118
  • 1000:$0.0874
  • 500:$0.1190
  • 250:$0.1204
  • 118:$0.1216
BSH205G2R
DISTI # BSH205G2R		NexperiaTrans MOSFET P-CH 20V 2.3A 3-Pin TO-263AB T/R (Alt: BSH205G2R)
RoHS: Compliant
Min Qty: 15000
Container: Tape and Reel		Asia - 0
  • 15000:$0.0690
  • 30000:$0.0671
  • 45000:$0.0653
  • 75000:$0.0635
  • 150000:$0.0627
  • 375000:$0.0619
  • 750000:$0.0604
BSH205G2R
DISTI # BSH205G2R		NexperiaTrans MOSFET P-CH 20V 2.3A 3-Pin TO-263AB T/R - Tape and Reel (Alt: BSH205G2R)
RoHS: Compliant
Min Qty: 12000
Container: Reel		Americas - 0
  • 12000:$0.0549
  • 18000:$0.0549
  • 30000:$0.0529
  • 60000:$0.0519
  • 120000:$0.0509
BSH205G2RNexperiaTrans MOSFET P-CH 20V 2.3A 3-Pin TO-263AB T/R - Tape and Reel
RoHS: Not Compliant
Container: Reel		Americas - 0
    BSH205G2R
    DISTI # 68Y7605    		NexperiaMOSFET Transistor, P Channel, -2 A, -20 V, 0.12 ohm, -4.5 V, -700 mV RoHS Compliant: Yes2740
    • 1:$0.4800
    • 10:$0.3070
    • 25:$0.2490
    • 50:$0.1900
    • 100:$0.1320
    • 250:$0.1220
    • 500:$0.1110
    • 1000:$0.1010
    BSH205G2RNexperiaBSH205G2 Series 20 V 2 A 170 mOhm SMT P-Channel TrenchMOS FET - SOT-23
    RoHS: Compliant    		6000Reel
    • 3000:$0.0750
    • 6000:$0.0646
    BSH205G2R
    DISTI # 771-BSH205G2R    		NexperiaMOSFET 20V P-channel Trench MOSFET
    RoHS: Compliant    		35707
    • 1:$0.4800
    • 10:$0.3070
    • 100:$0.1320
    • 1000:$0.1010
    • 3000:$0.0770
    • 9000:$0.0680
    • 24000:$0.0640
    • 45000:$0.0570
    • 99000:$0.0550
    BSH205G2R
    DISTI # 1364786    		NexperiaMOSFET P-CH 2.3A 20V SOT23-3, RL500
    • 3000:£0.0620
    • 9000:£0.0560
    BSH205G2R
    DISTI # 2498570    		NexperiaMOSFET, P-CH, -20V, -2A, TO236AB
    RoHS: Compliant    		5226
    • 1:$0.3750
    • 25:$0.3120
    • 100:$0.2010
    • 250:$0.1610
    • 500:$0.1370
    • 1000:$0.1170
    BSH205G2R
    DISTI # 2498570    		NexperiaMOSFET, P-CH, -20V, -2A, TO236AB
    RoHS: Compliant    		9125
    • 5:£0.2800
    • 25:£0.2680
    • 100:£0.1110
    • 250:£0.1060
    • 500:£0.0922
    画像 モデル 説明
    BSH201+215

    Mfr.#: BSH201+215

    OMO.#: OMO-BSH201-215-1190

    		 Now Nexperia BSH201 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    BSH202 , MAX6335US22D3

    Mfr.#: BSH202 , MAX6335US22D3

    OMO.#: OMO-BSH202-MAX6335US22D3-1190

    		 ブランドニューオリジナル
    BSH203

    Mfr.#: BSH203

    OMO.#: OMO-BSH203-1190

    		 Transistor: P-MOSFET, unipolar, -30V, -0.3A, 170mW, SOT23
    BSH203/G

    Mfr.#: BSH203/G

    OMO.#: OMO-BSH203-G-1190

    		 ブランドニューオリジナル
    BSH205/T1

    Mfr.#: BSH205/T1

    OMO.#: OMO-BSH205-T1-1190

    		 ブランドニューオリジナル
    BSH205125

    Mfr.#: BSH205125

    OMO.#: OMO-BSH205125-1190

    		 ブランドニューオリジナル
    BSH207

    Mfr.#: BSH207

    OMO.#: OMO-BSH207-1190

    		 ブランドニューオリジナル
    BSH207135

    Mfr.#: BSH207135

    OMO.#: OMO-BSH207135-1190

    		 Now Nexperia BSH207 - Small Signal Field-Effect Transistor, 1.52A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    BSH201,215-CUT TAPE

    Mfr.#: BSH201,215-CUT TAPE

    OMO.#: OMO-BSH201-215-CUT-TAPE-1190

    		 ブランドニューオリジナル
    BSH201,215

    Mfr.#: BSH201,215

    OMO.#: OMO-BSH201-215-NEXPERIA

    		 MOSFET P-CH 60V 300MA SOT-23
    可用性
    ストック:
    Available
    注文中:
    1000
    数量を入力してください:
    BSH205G2Rの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $0.08
    $0.08
    10
    $0.07
    $0.72
    100
    $0.07
    $6.87
    500
    $0.06
    $32.45
    1000
    $0.06
    $61.10
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
    皮切りに
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