IS43R86400D-6BLI-TR

IS43R86400D-6BLI-TR
Mfr. #:
IS43R86400D-6BLI-TR
メーカー:
ISSI
説明:
DRAM 512M (64Mx8) 166MHz DDR 2.5v
ライフサイクル:
メーカー新製品
データシート:
IS43R86400D-6BLI-TR データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IS43R86400D-6BLI-TR 詳しくは
製品属性
属性値
メーカー:
ISSI
製品カテゴリ:
DRAM
JBoss:
Y
タイプ:
SDRAM - DDR1
データバス幅:
8 bit
組織:
64 M x 8
パッケージ/ケース:
BGA-60
メモリー容量:
512 Mbit
最大クロック周波数:
166 MHz
アクセス時間:
6 ns
供給電圧-最大:
2.7 V
供給電圧-最小:
2.3 V
供給電流-最大:
370 mA
最低動作温度:
- 40 C
最高作動温度:
+ 85 C
シリーズ:
IS43R86400D
包装:
リール
ブランド:
ISSI
取り付けスタイル:
SMD / SMT
感湿性:
はい
動作供給電圧:
2.5 V
製品タイプ:
DRAM
ファクトリーパックの数量:
2500
サブカテゴリ:
メモリとデータストレージ
Tags
IS43R86400D-6BLI, IS43R86400D-6B, IS43R86400D-6, IS43R86400D, IS43R86400, IS43R86, IS43R8, IS43R, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    CA

    THANKS!

    2019-07-25
    O***i
    O***i
    HU

    Everything went all right.

    2019-04-08
    G***s
    G***s
    RU

    Diode bridges work, voltage drop somewhere 3 volts. Packed badly i will not hide, just thrown into the package, i have a little bent contacts, but what you wanted for this money, at the time of purchase 86,86 rubles.

    2019-05-07
***et
DRAM Chip DDR SDRAM 512M-Bit 64M x 8 2.5V 60-Pin TFBGA T/R
***i-Key
IC DRAM 512MBIT PARALLEL 60TFBGA
IS43R32800D 8Mx32 256-Mbit DDR SDRAM
ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
IS43R86400D 512Mb DDR SDRAM
ISSI IS43R86400D 512Mb DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. ISSI IS43R86400D 512Mb DDR SDRAM features programmable burst length, burst sequence, and CAS latency, enabling further advantages.
モデル メーカー 説明 ストック 価格
IS43R86400D-6BLI-TR
DISTI # IS43R86400D-6BLI-TR-ND
Integrated Silicon Solution IncIC DRAM 512M PARALLEL 60TFBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$7.5792
IS43R86400D-6BLI-TR
DISTI # IS43R86400D-6BLI-TR
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512M-Bit 64M x 8 2.5V 60-Pin TFBGA T/R - Tape and Reel (Alt: IS43R86400D-6BLI-TR)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$8.3900
  • 5000:$8.0900
  • 10000:$7.7900
  • 15000:$7.4900
  • 25000:$7.1900
IS43R86400D-6BLI
DISTI # 870-IS43R86400D-6BLI
Integrated Silicon Solution IncDRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
RoHS: Compliant
180
  • 1:$10.8200
  • 10:$10.0100
  • 25:$9.7900
  • 50:$9.7300
  • 100:$8.5700
  • 250:$8.1500
  • 500:$8.0600
  • 1000:$7.7900
IS43R86400D-6BLI-TR
DISTI # 870-43R86400D6BLITR
Integrated Silicon Solution IncDRAM 512M (64Mx8) 166MHz DDR 2.5v
RoHS: Compliant
0
  • 2500:$7.2700
画像 モデル 説明
IS43R86400D-5TLI

Mfr.#: IS43R86400D-5TLI

OMO.#: OMO-IS43R86400D-5TLI

DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
IS43R86400F-6TLI-TR

Mfr.#: IS43R86400F-6TLI-TR

OMO.#: OMO-IS43R86400F-6TLI-TR

DRAM 512M 64Mx8 166MHz DDR 2.5V
IS43R86400D-5TL

Mfr.#: IS43R86400D-5TL

OMO.#: OMO-IS43R86400D-5TL

DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
IS43R86400E-5TL

Mfr.#: IS43R86400E-5TL

OMO.#: OMO-IS43R86400E-5TL

DRAM DDR,512M,2.5V,RoHs 200MHz,64Mx8
IS43R86400F-6TLI

Mfr.#: IS43R86400F-6TLI

OMO.#: OMO-IS43R86400F-6TLI

DRAM 512M 64Mx8 166MHz DDR 2.5V
IS43R86400E-5TLI

Mfr.#: IS43R86400E-5TLI

OMO.#: OMO-IS43R86400E-5TLI

DRAM DDR,512M,2.5V,RoHs 200MHz,64Mx8, IT
IS43R86400E-6TLI-TR

Mfr.#: IS43R86400E-6TLI-TR

OMO.#: OMO-IS43R86400E-6TLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM DDR,512M,2.5V,RoHs 166MHz,64Mx8, IT
IS43R86400F-6BLI-TR

Mfr.#: IS43R86400F-6BLI-TR

OMO.#: OMO-IS43R86400F-6BLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 512M 64Mx8 166MHz DDR 2.5V
IS43R86400F-5TL

Mfr.#: IS43R86400F-5TL

OMO.#: OMO-IS43R86400F-5TL-INTEGRATED-SILICON-SOLUTION

DRAM 512M 64Mx8 200MHz DDR 2.5V
IS43R86400F-5BL-TR

Mfr.#: IS43R86400F-5BL-TR

OMO.#: OMO-IS43R86400F-5BL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 512M 64Mx8 200MHz DDR 2.5V
可用性
ストック:
Available
注文中:
1500
数量を入力してください:
IS43R86400D-6BLI-TRの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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