NE3510M04-A

NE3510M04-A
Mfr. #:
NE3510M04-A
Manufacturer:
CEL
Description:
RF JFET Transistors L-S Band Lo No Amp
Lifecycle:
New from this manufacturer.
Datasheet:
NE3510M04-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3510M04-A DatasheetNE3510M04-A Datasheet (P4-P6)NE3510M04-A Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
CEL
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HFET
Technology:
GaAs
Gain:
16 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
4 V
Vgs - Gate-Source Breakdown Voltage:
- 3 V
Id - Continuous Drain Current:
97 mA
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 mW
Mounting Style:
SMD/SMT
Package / Case:
FTSMM-4 (M04)
Operating Frequency:
4 GHz
Product:
RF JFET
Type:
GaAs HFET
Brand:
CEL
Forward Transconductance - Min:
70 mS
Gate-Source Cutoff Voltage:
- 0.7 V
NF - Noise Figure:
0.45 dB
P1dB - Compression Point:
11 dBm
Product Type:
RF JFET Transistors
Factory Pack Quantity:
1
Subcategory:
Transistors
Tags
NE3510, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans JFET N-CH 4V 97mA 4-Pin Thin-Type Super Mini-Mold
***i-Key
FET RF 4V 4GHZ M04
Part # Mfg. Description Stock Price
NE3510M04-A
DISTI # NE3510M04-A-ND
California Eastern Laboratories (CEL)FET RF 4V 4GHZ M04
RoHS: Compliant
Min Qty: 120
Container: Bulk
Limited Supply - Call
    NE3510M04-A
    DISTI # 551-NE3510M04-A
    California Eastern Laboratories (CEL)RF JFET Transistors L-S Band Lo No Amp
    RoHS: Compliant
    0
      Image Part # Description
      NE3512S02-T1C-A

      Mfr.#: NE3512S02-T1C-A

      OMO.#: OMO-NE3512S02-T1C-A

      RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
      NE3514S02-T1C-A(K)

      Mfr.#: NE3514S02-T1C-A(K)

      OMO.#: OMO-NE3514S02-T1C-A-K--1152

      RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
      NE3514S02-T1B-A

      Mfr.#: NE3514S02-T1B-A

      OMO.#: OMO-NE3514S02-T1B-A-1152

      RF SMALL SIGNAL TRANSISTOR HFET
      NE3510M04-T2-A

      Mfr.#: NE3510M04-T2-A

      OMO.#: OMO-NE3510M04-T2-A-CEL

      RF JFET Transistors L-S Band Lo No Amp
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      Mfr.#: NE3515S02-A

      OMO.#: OMO-NE3515S02-A-CEL

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      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A-CEL

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3512S02-T1

      Mfr.#: NE3512S02-T1

      OMO.#: OMO-NE3512S02-T1-1190

      New and Original
      NE3513M04

      Mfr.#: NE3513M04

      OMO.#: OMO-NE3513M04-1190

      New and Original
      NE3514S02-T1C

      Mfr.#: NE3514S02-T1C

      OMO.#: OMO-NE3514S02-T1C-1190

      New and Original
      NE3514S02-T1D

      Mfr.#: NE3514S02-T1D

      OMO.#: OMO-NE3514S02-T1D-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of NE3510M04-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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