NVMFS6H864NWFT1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DFN-5

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

80 V

Id - Continuous Drain Current:

23 A

Rds On - Drain-Source Resistance:

32 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

6.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

33 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Brand:

ON Semiconductor

Forward Transconductance - Min:

21.8 S

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

18 ns

Factory Pack Quantity:

1500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

16 ns

Typical Turn-On Delay Time:

7 ns

Tags

NVMFS6H, NVMFS6, NVMFS, NVMF, NVM