DMN2029UVT-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSOT-26-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

6.8 A

Rds On - Drain-Source Resistance:

24 mOhms

Vgs th - Gate-Source Threshold Voltage:

0.4 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

7.1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.7 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

433 ns

Product Type:

MOSFET

Rise Time:

139 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

1023 ns

Typical Turn-On Delay Time:

98 ns

Tags

DMN2029, DMN202, DMN20, DMN2, DMN