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CSD19537Q3T

CSD19537Q3T
Mfr. #:
CSD19537Q3T
Description:
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
Lifecycle:
New from this manufacturer.
Datasheet:
CSD19537Q3T Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
CSD19537Q3T more Information CSD19537Q3T Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-CLIP-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
53 A
Rds On - Drain-Source Resistance:
14.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.6 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
16 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
1 mm
Length:
3.3 mm
Series:
CSD19537Q3
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
45 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
3 ns
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
10 ns
Typical Turn-On Delay Time:
5 ns
Unit Weight:
0.000847 oz
Tags
CSD1953, CSD19, CSD1, CSD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100V, N ch NexFET MOSFET™, single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
***Components
In a Pack of 5, Texas Instruments CSD19537Q3T MOSFET
***ical
Trans MOSFET N-CH Si 100V 50A 8-Pin VSON-CLIP EP T/R
***et Europe
Trans MOSFET N-CH 100V 50A 8-Pin VSON-CLIP T/R
***i-Key
MOSFET N-CH 100V 50A 8VSON
***ark
Mosfet, N-Ch, 100V, 50A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0121Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 50A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N-CH, 100V, 50A, VSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0121ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:83W; Modello Case Transistor:VSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***AS INSTRUMENTS INCORPORATED
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
CSD19537Q3 N-Channel NexFET™ Power MOSFETs
OMO Electronic CSD19537Q3 N-Channel NexFET™ Power MOSFETs are a 100V 12.1mΩ N-Channel NexFET™ power MOSFET that is designed to minimize losses in power conversion applications. This MOSFET features an ultra-low Qg and Qgd with low thermal resistance. It is also avalanche rated and comes in Pb-Free, halogen free RoHS complant SON-8 3.3mmx3.3mm plastic package. Typical applications include primary side isolated converters and motor control.Learn More
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Availability
Stock:
15
On Order:
1998
Enter Quantity:
Current price of CSD19537Q3T is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.36
$1.36
10
$1.16
$11.60
100
$0.89
$89.00
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