IXTA1R4N100P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1 kV

Id - Continuous Drain Current:

1.4 A

Rds On - Drain-Source Resistance:

11 Ohms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

63 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

4.83 mm

Length:

10.41 mm

Series:

IXTA1R4N100

Transistor Type:

1 N-Channel

Width:

9.65 mm

Brand:

IXYS

Fall Time:

28 ns

Product Type:

MOSFET

Rise Time:

35 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

65 ns

Typical Turn-On Delay Time:

25 ns

Unit Weight:

0.081130 oz

Tags

IXTA1R4N10, IXTA1R4, IXTA1R, IXTA1, IXTA, IXT