IXTK8N150L

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-264-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.5 kV

Id - Continuous Drain Current:

8 A

Rds On - Drain-Source Resistance:

3.6 Ohms

Vgs th - Gate-Source Threshold Voltage:

8 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

250 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

700 W

Channel Mode:

Enhancement

Packaging:

Tube

Height:

26.59 mm

Length:

20.29 mm

Series:

IXTK8N150

Type:

Linear Power MOSFET

Width:

5.31 mm

Brand:

IXYS

Forward Transconductance - Min:

1.4 S

Fall Time:

95 ns

Product Type:

MOSFET

Rise Time:

18 ns

Factory Pack Quantity:

25

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

90 ns

Typical Turn-On Delay Time:

36 ns

Unit Weight:

0.352740 oz

Tags

IXTK8, IXTK, IXT