SCT3030KLHRC11

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

SiC

Mounting Style:

Through Hole

Package / Case:

TO-247N-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1200 V

Id - Continuous Drain Current:

72 A

Rds On - Drain-Source Resistance:

30 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.7 V

Vgs - Gate-Source Voltage:

- 4 V, 22 V

Qg - Gate Charge:

131 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

339 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

SCT3x

Transistor Type:

1 N-Channel

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

10.8 S

Fall Time:

29 ns

Product Type:

MOSFET

Rise Time:

42 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

61 ns

Typical Turn-On Delay Time:

24 ns

Tags

SCT3030K, SCT303, SCT30, SCT3, SCT