BGA7H1BN6E6327XTSA1

Mfr. #:: BGA7H1BN6E6327XTSA1
メーカー:: Infineon Technologies
説明:: RF Amplifier RF SILICON MMIC
ライフサイクル:: メーカー新製品
データシート:: BGA7H1BN6E6327XTSA1 データシート
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詳しくは:: BGA7H1BN6E6327XTSA1 詳しくは

製品属性
属性値

メーカー：: インフィニオン

製品カテゴリ：: RFアンプ

JBoss：: Y

包装：: リール

ブランド：: インフィニオンテクノロジーズ

製品タイプ：: RFアンプ

ファクトリーパックの数量：: 15000

サブカテゴリ：: ワイヤレスおよびRF集積回路

パーツ番号エイリアス：: 7H1BN6 BGA E6327 SP001402778

Tags: BGA7H1B, BGA7H, BGA7, BGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BGA7H1BN6E6327XTSA1 説明

***et Europe: RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs

***ical: Low Noise Amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE

***ineon: BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc | Summary of Features: Insertion power gain: 12.3 dB; Low noise figure: 0.85 dB; Low current consumption: 4.3 mA; Insertion loss in bypass mode: -3.1 dB; Operating frequencies: 1805 - 2690 MHz; Two-state control: Bypass- and high gain-mode; Supply voltage: 1.5 V to 3.6 V; Digital on/off switch (1V logic high level); Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2); B7HF Silicon Germanium technology; RF output internally matched to 50 ; Only 1 external SMD component necessary; Pb-free (RoHS compliant) package | Target Applications: LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.

BGA7H1BN6E6327XTSA1 詳しくは

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

モデル	メーカー	説明	ストック	価格
BGA7H1BN6E6327XTSA1 DISTI # BGA7H1BN6E6327XTSA1-ND	Infineon Technologies AG	IC RF AMP LTE 1.805GHZ-2.69GHZ RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.2145
BGA7H1BN6E6327XTSA1 DISTI # BGA7H1BN6E6327XTSA1	Infineon Technologies AG	RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs - Tape and Reel (Alt: BGA7H1BN6E6327XTSA1) RoHS: Compliant Min Qty: 15000 Container: Reel	Americas - 0	150000:$0.2089 90000:$0.2129 60000:$0.2199 30000:$0.2289 15000:$0.2369
BGA7H1BN6E6327XTSA1 DISTI # 726-BGA7H1BN6E6327XT	Infineon Technologies AG	RF Amplifier RF SILICON MMIC RoHS: Compliant	0	1:$0.6200 10:$0.5120 100:$0.3300 1000:$0.2640 2500:$0.2230 10000:$0.2150 15000:$0.2070

関連製品

画像	モデル	説明
	Mfr.#: BGA7H1BN6E6327XTSA1 OMO.#: OMO-BGA7H1BN6E6327XTSA1	RF Amplifier RF SILICON MMIC
	Mfr.#: BGA7H1BN6E6327 OMO.#: OMO-BGA7H1BN6E6327-INFINEON-TECHNOLOGIES	ブランドニューオリジナル
	Mfr.#: BGA7H1BN6E6327XTSA1INFIN OMO.#: OMO-BGA7H1BN6E6327XTSA1INFIN-INFINEON-TECHNOLOGIES	ブランドニューオリジナル
	Mfr.#: BGA7H1BN6E6327XTSA1 OMO.#: OMO-BGA7H1BN6E6327XTSA1-INFINEON-TECHNOLOGIES	IC RF AMP LTE 1.805GHZ-2.69GHZ