BGA7H1BN6E6327XTSA1

BGA7H1BN6E6327XTSA1
Mfr. #:
BGA7H1BN6E6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
Datasheet:
BGA7H1BN6E6327XTSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
BGA7H1BN6E6327XTSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
RF Amplifier
RoHS:
Y
Packaging:
Reel
Brand:
Infineon Technologies
Product Type:
RF Amplifier
Factory Pack Quantity:
15000
Subcategory:
Wireless & RF Integrated Circuits
Part # Aliases:
7H1BN6 BGA E6327 SP001402778
Tags
BGA7H1B, BGA7H, BGA7, BGA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs
***ical
Low Noise Amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE
***ineon
BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc | Summary of Features: Insertion power gain: 12.3 dB; Low noise figure: 0.85 dB; Low current consumption: 4.3 mA; Insertion loss in bypass mode: -3.1 dB; Operating frequencies: 1805 - 2690 MHz; Two-state control: Bypass- and high gain-mode; Supply voltage: 1.5 V to 3.6 V; Digital on/off switch (1V logic high level); Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2); B7HF Silicon Germanium technology; RF output internally matched to 50 ; Only 1 external SMD component necessary; Pb-free (RoHS compliant) package | Target Applications: LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
RF Solutions
Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.
Part # Mfg. Description Stock Price
BGA7H1BN6E6327XTSA1
DISTI # BGA7H1BN6E6327XTSA1-ND
Infineon Technologies AGIC RF AMP LTE 1.805GHZ-2.69GHZ
RoHS: Compliant
Min Qty: 15000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.2145
BGA7H1BN6E6327XTSA1
DISTI # BGA7H1BN6E6327XTSA1
Infineon Technologies AGRF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs - Tape and Reel (Alt: BGA7H1BN6E6327XTSA1)
RoHS: Compliant
Min Qty: 15000
Container: Reel
Americas - 0
  • 150000:$0.2089
  • 90000:$0.2129
  • 60000:$0.2199
  • 30000:$0.2289
  • 15000:$0.2369
BGA7H1BN6E6327XTSA1
DISTI # 726-BGA7H1BN6E6327XT
Infineon Technologies AGRF Amplifier RF SILICON MMIC
RoHS: Compliant
0
  • 1:$0.6200
  • 10:$0.5120
  • 100:$0.3300
  • 1000:$0.2640
  • 2500:$0.2230
  • 10000:$0.2150
  • 15000:$0.2070
Image Part # Description
BGA7H1BN6E6327XTSA1

Mfr.#: BGA7H1BN6E6327XTSA1

OMO.#: OMO-BGA7H1BN6E6327XTSA1

RF Amplifier RF SILICON MMIC
BGA7H1BN6E6327

Mfr.#: BGA7H1BN6E6327

OMO.#: OMO-BGA7H1BN6E6327-INFINEON-TECHNOLOGIES

New and Original
BGA7H1BN6E6327XTSA1INFIN

Mfr.#: BGA7H1BN6E6327XTSA1INFIN

OMO.#: OMO-BGA7H1BN6E6327XTSA1INFIN-INFINEON-TECHNOLOGIES

New and Original
BGA7H1BN6E6327XTSA1

Mfr.#: BGA7H1BN6E6327XTSA1

OMO.#: OMO-BGA7H1BN6E6327XTSA1-INFINEON-TECHNOLOGIES

IC RF AMP LTE 1.805GHZ-2.69GHZ
Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of BGA7H1BN6E6327XTSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.62
$0.62
10
$0.51
$5.12
100
$0.33
$33.00
1000
$0.26
$264.00
2500
$0.22
$557.50
10000
$0.22
$2 150.00
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