ZXMN6A07ZTA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-89-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

2.5 A

Rds On - Drain-Source Resistance:

250 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

3.2 nC

Pd - Power Dissipation:

2.6 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.6 mm

Length:

4.6 mm

Series:

ZXMN6A07

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

2.6 mm

Brand:

Diodes Incorporated

Forward Transconductance - Min:

2.3 S

Fall Time:

2 ns

Product Type:

MOSFET

Rise Time:

1.4 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

4.9 ns

Typical Turn-On Delay Time:

1.8 ns

Unit Weight:

0.004603 oz

Tags

ZXMN6A07ZT, ZXMN6A07Z, ZXMN6A07, ZXMN6A0, ZXMN6A, ZXMN6, ZXMN, ZXM