FZT657TA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-223-4

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

300 V

Collector- Base Voltage VCBO:

300 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.5 V

Maximum DC Collector Current:

0.5 A

Gain Bandwidth Product fT:

30 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

FZT657

DC Current Gain hFE Max:

40

Height:

1.65 mm

Length:

6.7 mm

Packaging:

Reel

Width:

3.7 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

0.5 A

DC Collector/Base Gain hfe Min:

40 at 10 mA, 5 V, 50 at 100 mA, 5 V

Pd - Power Dissipation:

2 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.003951 oz

Tags

FZT657T, FZT657, FZT65, FZT6, FZT