FCD2250N80Z

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

2.6 A

Rds On - Drain-Source Resistance:

2.25 Ohms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

14 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

39 W

Tradename:

SuperFET II

Packaging:

Reel

Height:

2.39 mm

Length:

6.73 mm

Series:

FCD2250N80Z

Width:

6.22 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

2.28 S

Fall Time:

8.7 ns

Product Type:

MOSFET

Rise Time:

6.7 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

26 ns

Typical Turn-On Delay Time:

11 ns

Unit Weight:

0.009184 oz

Tags

FCD22, FCD2, FCD