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MRF6V12500HR5

MRF6V12500HR5
Mfr. #:
MRF6V12500HR5
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors VHV6 500W 50V NI780H
ライフサイクル:
メーカー新製品
データシート:
MRF6V12500HR5 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
MRF6V12500HR5 詳しくは
製品属性
属性値
メーカー：
NXP
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
Y
トランジスタの極性：
Nチャネル
テクノロジー：
Si
Vds-ドレイン-ソース間降伏電圧：
110 V
利得：
18.5 dB
出力電力：
50 W
最高作動温度：
+ 150 C
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
NI-780
包装：
リール
構成：
独身
動作周波数：
0.96 GHz to 1.215 GHz
シリーズ：
MRF6V12500H
ブランド：
NXP /フリースケール
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
50
サブカテゴリ：
MOSFET
Vgs-ゲート-ソース間電圧：
10 V
Vgs th-ゲート-ソースしきい値電圧：
2.4 V
パーツ番号エイリアス：
935310167178
単位重量：
0.226635 oz
Tags
MRF6V12500HR, MRF6V12500H, MRF6V125, MRF6V12, MRF6V1, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***U
    R***U
    RO

    all is ok

    2019-01-24
    K***n
    K***n
    IL

    good

    2019-04-28
    A***V
    A***V
    RU

    Works

    2019-04-19
    G***s
    G***s
    CY

    Thank you.

    2019-07-10
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***nsix Microsemi
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***ark
RF MOSFET, N CHANNEL, 110V, 375D-05; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20.5dB; Gate-Source Voltage:10V; Operating Frequency Max:860MHz; Output Power, Pout:90W
***nell
RF FET, 110V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP3450H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ark
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***nell
RF FET, N-CH, 110V, 1.8-150MHZ, NI-1230; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 150MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
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*** Semiconductors SCT
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***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
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***eco
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***SIT Distribution GmbH
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***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
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***nsix Microsemi
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
MRF6V12500 Pulse Lateral N-Ch RF Power MOSFET
NXP's MRF6V12500 Pulse Lateral N-Channel RF Power MOSFET is designed for applications operating at frequencies between 960 and 1215 MHz. Features include devices that are internally matched for ease of use, qualified up to a maximum of 50 VDD operation, integrated ESD protection, and they have greater negative gate-source voltage range for improved Class C operation. This device is suitable for use in pulse applications.Learn More
モデル メーカー 説明 ストック 価格
MRF6V12500HR5
DISTI # 26099271		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin NI-780 T/R919
  • 1:$541.9000
MRF6V12500HR5
DISTI # 568-15012-2-ND		NXP SemiconductorsFET RF 110V 1.03GHZ NI-780H
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		50In Stock
  • 50:$367.0056
MRF6V12500HR5
DISTI # 568-15012-1-ND		NXP SemiconductorsFET RF 110V 1.03GHZ NI-780H
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		50In Stock
  • 1:$378.0200
MRF6V12500HR5
DISTI # 568-15012-6-ND		NXP SemiconductorsFET RF 110V 1.03GHZ NI-780H
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		50In Stock
  • 1:$378.0200
MRF6V12500HR5
DISTI # MRF6V12500HR5		Avnet, Inc.Trans MOSFET N-CH 110V 2-Pin NI-780H T/R - Tape and Reel (Alt: MRF6V12500HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$402.1900
  • 100:$386.3900
  • 200:$371.2900
  • 300:$357.8900
  • 500:$350.9900
MRF6V12500HR5
DISTI # 841-MRF6V12500HR5		NXP SemiconductorsRF MOSFET Transistors VHV6 500W 50V NI780H
RoHS: Compliant		0
  • 1:$378.0100
  • 5:$372.2000
  • 10:$366.6600
  • 25:$358.7500
  • 50:$353.2400
MRF6V12500HR5
DISTI # MRF6V12500HR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		922
  • 1:$370.3400
  • 10:$360.8500
  • 25:$351.8300
MRF6V12500HR5
DISTI # C1S233100302211		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin NI-780 T/R
RoHS: Compliant		919
  • 10:$518.0000
  • 5:$530.0000
  • 1:$615.0000
画像 モデル 説明
MRF6V14300HSR5

Mfr.#: MRF6V14300HSR5

OMO.#: OMO-MRF6V14300HSR5

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V13250HSR5

Mfr.#: MRF6V13250HSR5

OMO.#: OMO-MRF6V13250HSR5

 RF MOSFET Transistors VHV6 250W 50V NI780HS
MRF6V12250HSR5

Mfr.#: MRF6V12250HSR5

OMO.#: OMO-MRF6V12250HSR5

 RF MOSFET Transistors VHV6 250W 50V NI780HS
MRF6V12500GSR5

Mfr.#: MRF6V12500GSR5

OMO.#: OMO-MRF6V12500GSR5

 RF MOSFET Transistors Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
MRF6V14300HR3

Mfr.#: MRF6V14300HR3

OMO.#: OMO-MRF6V14300HR3

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V12250HSR3

Mfr.#: MRF6V12250HSR3

OMO.#: OMO-MRF6V12250HSR3-NXP-SEMICONDUCTORS

 FET RF 100V 1.03GHZ NI-780S
MRF6V13250H

Mfr.#: MRF6V13250H

OMO.#: OMO-MRF6V13250H-1190

 ブランドニューオリジナル
MRF6V14300MSR5

Mfr.#: MRF6V14300MSR5

OMO.#: OMO-MRF6V14300MSR5-1190

 ブランドニューオリジナル
MRF6V12250HR5

Mfr.#: MRF6V12250HR5

OMO.#: OMO-MRF6V12250HR5-NXP-SEMICONDUCTORS

 FET RF 100V 1.03GHZ NI-780
MRF6V13250HSR5

Mfr.#: MRF6V13250HSR5

OMO.#: OMO-MRF6V13250HSR5-NXP-SEMICONDUCTORS

 FET RF 120V 1.3GHZ NI780S
可用性
ストック:
Available
注文中:
3500
数量を入力してください:
MRF6V12500HR5の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$378.01
$378.01
5
$372.20
$1 861.00
10
$366.66
$3 666.60
25
$358.75
$8 968.75
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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