IPB65R190CFD

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

17.5 A

Rds On - Drain-Source Resistance:

171 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

68 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

151 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Series:

CoolMOS CFD2

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Fall Time:

6.4 ns

Product Type:

MOSFET

Rise Time:

8.4 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

53.2 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

IPB65R190CFDATMA1 IPB65R19CFDXT SP000905378

Unit Weight:

0.139332 oz

Tags

IPB65R190CF, IPB65R19, IPB65R1, IPB65, IPB6, IPB