2SB1182TLR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

32 V

Collector- Base Voltage VCBO:

- 32 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

2 A

Gain Bandwidth Product fT:

100 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

2SB1182

DC Current Gain hFE Max:

180

Height:

2.3 mm

Length:

6.5 mm

Packaging:

Reel

Width:

5.5 mm

Brand:

ROHM Semiconductor

Continuous Collector Current:

- 2 A

DC Collector/Base Gain hfe Min:

180

Pd - Power Dissipation:

10000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Unit Weight:

0.009185 oz

Tags

2SB1182TLR, 2SB1182TL, 2SB1182T, 2SB1182, 2SB118, 2SB11, 2SB1, 2SB