FQU4N50TU-WS

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

2.6 A

Rds On - Drain-Source Resistance:

2.7 Ohms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

QFET

Packaging:

Tube

Height:

6.3 mm

Length:

6.8 mm

Series:

FQU4N50TU_WS

Transistor Type:

1 N-Channel

Width:

2.5 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

30 ns

Product Type:

MOSFET

Rise Time:

45 ns

Factory Pack Quantity:

5040

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

FQU4N50TU_WS

Unit Weight:

0.012102 oz

Tags

FQU4N50T, FQU4N5, FQU4N, FQU4, FQU