2N3710

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

T

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

30 V

Collector- Base Voltage VCBO:

30 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

1 V

Maximum DC Collector Current:

200 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

2N3710

DC Current Gain hFE Max:

330

Height:

5.33 mm

Length:

5.21 mm

Width:

4.19 mm

Brand:

Central Semiconductor

DC Collector/Base Gain hfe Min:

90

Pd - Power Dissipation:

625 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

100

Subcategory:

Transistors

Unit Weight:

0.016000 oz

Tags

2N371, 2N37, 2N3