DMN3025LFG-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerDI3333-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

7.5 A

Rds On - Drain-Source Resistance:

18 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

11.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN3025

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

9 S

Fall Time:

4.7 ns

Product Type:

MOSFET

Rise Time:

4.1 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

17.9 ns

Typical Turn-On Delay Time:

3.8 ns

Unit Weight:

0.002540 oz

Tags

DMN3025LF, DMN3025, DMN302, DMN30, DMN3, DMN