CSD85301Q2

Product Attribute

Attribute Value

Manufacturer:

Texas Instruments

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

WSON-FET-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

8 A

Rds On - Drain-Source Resistance:

27 mOhms

Vgs th - Gate-Source Threshold Voltage:

600 mV

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

5.4 nC, 5.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.3 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

NexFET

Packaging:

Reel

Height:

0.75 mm

Length:

2 mm

Series:

CSD85301Q2

Transistor Type:

2 N-Channel

Width:

2 mm

Brand:

Texas Instruments

Forward Transconductance - Min:

20 S, 20 S

Fall Time:

15 ns, 15 ns

Product Type:

MOSFET

Rise Time:

26 ns, 26 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

14 ns, 14 ns

Typical Turn-On Delay Time:

6 ns, 6 ns

Unit Weight:

0.000342 oz

Tags

CSD8530, CSD85, CSD8, CSD