IXTX200N10L2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

PLUS-247-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

200 A

Rds On - Drain-Source Resistance:

11 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

540 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.04 kW

Channel Mode:

Enhancement

Tradename:

Linear L2

Packaging:

Tube

Height:

21.34 mm

Length:

16.13 mm

Series:

IXTX200N10

Type:

Linear L2 Power MOSFET

Width:

5.21 mm

Brand:

IXYS

Forward Transconductance - Min:

55 S

Fall Time:

27 ns

Product Type:

MOSFET

Rise Time:

225 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

127 ns

Typical Turn-On Delay Time:

40 ns

Unit Weight:

0.056438 oz

Tags

IXTX20, IXTX2, IXTX, IXT