IXDR35N60BD1

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

ISOPLUS-247-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

2.2 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

38 A

Pd - Power Dissipation:

125 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

IXDR35N60B

Packaging:

Tube

Continuous Collector Current Ic Max:

48 A

Height:

21.34 mm

Length:

16.13 mm

Operating Temperature Range:

- 55 C to + 150 C

Width:

5.21 mm

Brand:

IXYS

Continuous Collector Current:

38 A

Gate-Emitter Leakage Current:

500 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

30

Subcategory:

IGBTs

Unit Weight:

0.186952 oz

Tags

IXDR3, IXDR, IXD