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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| FDB6676S DISTI # 512-FDB6676S | ON Semiconductor | MOSFET 30V N-Ch PowerTrench Logic Level RoHS: Compliant | 0 | |
| FDB6676S_Q DISTI # 512-FDB6676S_Q | ON Semiconductor | MOSFET 30V N-Ch PowerTrench Logic Level RoHS: Not compliant | 0 | |
| FDB6676S | Fairchild Semiconductor Corporation | 76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 718 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: FDB6021P-NL OMO.#: OMO-FDB6021P-NL-1190 |
ブランドニューオリジナル |
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Mfr.#: FDB6030 OMO.#: OMO-FDB6030-1190 |
ブランドニューオリジナル |
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Mfr.#: FDB6030LFSC OMO.#: OMO-FDB6030LFSC-1190 |
ブランドニューオリジナル |
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Mfr.#: FDB6035AL OMO.#: OMO-FDB6035AL-1190 |
MOSFET N-Channel PowerTrench |
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Mfr.#: FDB6035L OMO.#: OMO-FDB6035L-1190 |
Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: FDB603AC OMO.#: OMO-FDB603AC-1190 |
ブランドニューオリジナル |
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Mfr.#: FDB6670AL |
MOSFET N-CH 30V 80A D2PAK |
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Mfr.#: FDB6676 OMO.#: OMO-FDB6676-1190 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: FDB6676S FDB6676 OMO.#: OMO-FDB6676S-FDB6676-1190 |
ブランドニューオリジナル |
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Mfr.#: FDB6690S-NL OMO.#: OMO-FDB6690S-NL-1190 |
ブランドニューオリジナル |