PD57006TR-E

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

N-Channel

Technology:

Si

Id - Continuous Drain Current:

1 A

Vds - Drain-Source Breakdown Voltage:

65 V

Gain:

15 dB

Output Power:

6 W

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

PowerSO-10RF-Formed-4

Packaging:

Reel

Configuration:

Single

Height:

3.5 mm

Length:

7.5 mm

Operating Frequency:

1 GHz

Series:

PD57006-E

Type:

RF Power MOSFET

Width:

9.4 mm

Brand:

STMicroelectronics

Channel Mode:

Enhancement

Moisture Sensitive:

Yes

Pd - Power Dissipation:

20 W

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

600

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

20 V

Unit Weight:

0.105822 oz

Tags

PD57006, PD5700, PD570, PD57, PD5