IRFSL38N20DPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

44 A

Rds On - Drain-Source Resistance:

54 mOhms

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

60 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

320 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Transistor Type:

1 N-Channel

Type:

Smps MOSFET

Width:

4.5 mm

Brand:

Infineon / IR

Fall Time:

47 ns

Product Type:

MOSFET

Rise Time:

95 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

29 ns

Typical Turn-On Delay Time:

16 ns

Part # Aliases:

SP001557568

Unit Weight:

0.035274 oz

Tags

IRFSL3, IRFSL, IRFS, IRF