TK39N60X,S1F

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

38.8 A

Rds On - Drain-Source Resistance:

55 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

85 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

270 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

DTMOSIV

Height:

20.95 mm

Length:

15.94 mm

Series:

TK39N60X

Transistor Type:

1 N-Channel

Width:

5.02 mm

Brand:

Toshiba

Forward Transconductance - Min:

-

Fall Time:

6 ns

Product Type:

MOSFET

Rise Time:

35 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

155 ns

Typical Turn-On Delay Time:

60 ns

Unit Weight:

1.340411 oz

Tags

TK39N60X, TK39N60, TK39N, TK39, TK3