IXTA60N10T

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

60 A

Rds On - Drain-Source Resistance:

18 mOhms

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

176 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

4.5 mm

Length:

9.9 mm

Series:

IXTA60N10

Transistor Type:

1 N-Channel

Width:

9.2 mm

Brand:

IXYS

Fall Time:

37 ns

Product Type:

MOSFET

Rise Time:

40 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

43 ns

Typical Turn-On Delay Time:

27 ns

Unit Weight:

0.056438 oz

Tags

IXTA60N1, IXTA60, IXTA6, IXTA, IXT