2DA1213YQ-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-89-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 50 V

Collector- Base Voltage VCBO:

- 50 V

Emitter- Base Voltage VEBO:

- 6 V

Collector-Emitter Saturation Voltage:

- 0.5 V

Maximum DC Collector Current:

- 2.5 A

Gain Bandwidth Product fT:

160 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

240 at - 500 mA, - 2 V

Packaging:

Reel

Brand:

Diodes Incorporated

Continuous Collector Current:

- 2 A

DC Collector/Base Gain hfe Min:

120 at - 500 mA, - 2 V

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Tags

2DA1213Y, 2DA121, 2DA12, 2DA1, 2DA