IXTY08N100D2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1 kV

Id - Continuous Drain Current:

800 mA

Rds On - Drain-Source Resistance:

21 Ohms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

14.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

60 W

Configuration:

Single

Channel Mode:

Depletion

Packaging:

Tube

Series:

IXTY08N100

Transistor Type:

1 N-Channel

Brand:

IXYS

Forward Transconductance - Min:

330 mS

Fall Time:

48 ns

Product Type:

MOSFET

Rise Time:

57 ns

Factory Pack Quantity:

70

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

34 ns

Typical Turn-On Delay Time:

28 ns

Unit Weight:

0.081130 oz

Tags

IXTY08N100D, IXTY08N10, IXTY08N1, IXTY08, IXTY0, IXTY, IXT