IRF7379TRPBF

Mfr. #:: IRF7379TRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET N/P-CH 30V 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7379TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IRF7379TRPBF more Information

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: FETs - Arrays

Series: HEXFETR

Packaging: Digi-ReelR Alternate Packaging

Unit-Weight: 0.019048 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: 1 N-Channel 1 P-Channel

FET-Type: N and P-Channel

Power-Max: 2.5W

Transistor-Type: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: 520pF @ 25V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 5.8A, 4.3A

Rds-On-Max-Id-Vgs: 45 mOhm @ 5.8A, 10V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Charge-Qg-Vgs: 25nC @ 10V

Pd-Power-Dissipation: 2.5 W

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 5.8 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 75 mOhms

Transistor-Polarity: N-Channel P-Channel

Qg-Gate-Charge: 16.7 nC

Tags: IRF7379, IRF737, IRF73, IRF7, IRF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7379TRPBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF7379TRPBF DISTI # IRF7379PBFCT-ND	Infineon Technologies AG	MOSFET N/P-CH 30V 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3018In Stock	1000:$0.4305 500:$0.5382 100:$0.7266 10:$0.9420 1:$1.0800
IRF7379TRPBF DISTI # IRF7379PBFDKR-ND	Infineon Technologies AG	MOSFET N/P-CH 30V 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3018In Stock	1000:$0.4305 500:$0.5382 100:$0.7266 10:$0.9420 1:$1.0800
IRF7379TRPBF DISTI # IRF7379PBFTR-ND	Infineon Technologies AG	MOSFET N/P-CH 30V 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.3788
IRF7379TRPBF DISTI # IRF7379TRPBF	Infineon Technologies AG	Trans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7379TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2729 8000:$0.2629 16000:$0.2539 24000:$0.2449 40000:$0.2409
IRF7379TRPBF DISTI # 34AC1779	Infineon Technologies AG	MOSFET, N & P-CH, 30V, 5.8A, SOIC,Transistor Polarity:N and P Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes	3390	1:$0.8900 10:$0.7370 25:$0.6500 50:$0.5620 100:$0.4750 250:$0.4430 500:$0.4120 1000:$0.3800
IRF7379TRPBF DISTI # 70018897	Infineon Technologies AG	MOSFET,DUAL N/P-CHANNEL,30V,5.8A,SO-8 RoHS: Compliant	0	4000:$1.2600 8000:$1.2350 20000:$1.1970 40000:$1.1470 100000:$1.0710
IRF7379TRPBF DISTI # 942-IRF7379TRPBF	Infineon Technologies AG	MOSFET MOSFT DUAL N/PCh 30V 5.8A RoHS: Compliant	3835	1:$0.8900 10:$0.7370 100:$0.4750 1000:$0.3800 4000:$0.3210 8000:$0.3090 24000:$0.2970
IRF7379TRPBF DISTI # 2781211	Infineon Technologies AG	MOSFET, N & P-CH, 30V, 5.8A, SOIC RoHS: Compliant	3390	5:$1.2300 25:$1.0700 100:$0.8750 250:$0.7390 500:$0.6400 1000:$0.6050 5000:$0.5730
IRF7379TRPBF DISTI # 2781211	Infineon Technologies AG	MOSFET, N & P-CH, 30V, 5.8A, SOIC RoHS: Compliant	3390	5:£0.8360 25:£0.7520 100:£0.5790 250:£0.5040 500:£0.4290

Related products

Image	Part #	Description
	Mfr.#: IRF7379TRPBF OMO.#: OMO-IRF7379TRPBF	MOSFET MOSFT DUAL N/PCh 30V 5.8A
	Mfr.#: IRF737LCPBF OMO.#: OMO-IRF737LCPBF	MOSFET N-Chan 300V 6.1 Amp
	Mfr.#: IRF7379PBF OMO.#: OMO-IRF7379PBF	MOSFET 30V DUAL N / P CH 20V VGS MAX
	Mfr.#: IRF7379 OMO.#: OMO-IRF7379-INFINEON-TECHNOLOGIES	MOSFET N/P-CH 30V 8-SOIC
	Mfr.#: IRF7379TR OMO.#: OMO-IRF7379TR-INFINEON-TECHNOLOGIES	MOSFET N/P-CH 30V 8-SOIC
	Mfr.#: IRF737LCL OMO.#: OMO-IRF737LCL-VISHAY	MOSFET N-CH 300V 6.1A TO-262
	Mfr.#: IRF737LCSTRL OMO.#: OMO-IRF737LCSTRL-VISHAY	MOSFET N-CH 300V 6.1A D2PAK
	Mfr.#: IRF7379PBF OMO.#: OMO-IRF7379PBF-INFINEON-TECHNOLOGIES	MOSFET N/P-CH 30V 8-SOIC
	Mfr.#: IRF7379QTRPBF. OMO.#: OMO-IRF7379QTRPBF--1190	New and Original
	Mfr.#: IRF737LC OMO.#: OMO-IRF737LC-VISHAY	MOSFET N-CH 300V 6.1A TO-220AB

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of IRF7379TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.36~~; ~~$0.36~~

10: ~~$0.34~~; ~~$3.43~~

100: ~~$0.33~~; ~~$32.52~~

500: ~~$0.31~~; ~~$153.55~~

1000: ~~$0.29~~; ~~$289.10~~

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IRF7379TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes