FDD5N50NZTM

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

1.5 Ohms

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

12 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

62 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.39 mm

Length:

6.73 mm

Series:

FDD5N50NZ

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

3.54 S

Fall Time:

21 ns

Product Type:

MOSFET

Rise Time:

22 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

28 ns

Typical Turn-On Delay Time:

12 ns

Unit Weight:

0.009184 oz

Tags

FDD5N50N, FDD5N50, FDD5N5, FDD5N, FDD5, FDD