SQD40031EL_GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

3.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

1. 5 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

186 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

136 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

98 S

Fall Time:

72 ns

Product Type:

MOSFET

Rise Time:

204 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

126 ns

Typical Turn-On Delay Time:

16 ns

Tags

SQD400, SQD40, SQD4, SQD