ISO5851DWR

ISO5851DWR
Mfr. #:
ISO5851DWR
説明:
Gate Drivers Iso Gate Driver
ライフサイクル:
メーカー新製品
データシート:
ISO5851DWR データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
ISO5851DWR 詳しくは ISO5851DWR Product Details
製品属性
属性値
メーカー:
テキサスインスツルメンツ
製品カテゴリ:
ゲートドライバー
JBoss:
Y
製品:
絶縁ゲートドライバ
タイプ:
反転、非反転
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
SOIC-16
ドライバーの数:
1 Driver
出力数:
1 Output
出力電流:
2.5 A
構成:
独身
立ち上がり時間:
20 ns
立ち下がり時間:
20 ns
供給電圧-最小:
3 V
供給電圧-最大:
5.5 V
伝播遅延-最大:
110 ns
Pd-消費電力:
600 mW
最低動作温度:
- 40 C
最高作動温度:
+ 125 C
シリーズ:
ISO5851
包装:
リール
特徴:
DESAT保護、ミラークランプ、電源良好、障害出力、リセット
高さ:
2.65 mm
絶縁電圧:
8 kV
長さ:
10.5 mm
動作温度範囲:
- 40 C to + 125 C
出力電圧:
15 V to 30 V
テクノロジー:
Si
幅:
7.6 mm
ブランド:
テキサスインスツルメンツ
感湿性:
はい
動作供給電圧:
3 V, 5.5 V
製品タイプ:
ゲートドライバー
ファクトリーパックの数量:
2000
サブカテゴリ:
PMIC-パワーマネジメントIC
単位重量:
0.023492 oz
Tags
ISO5851, ISO58, ISO5, ISO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**y
    E**y
    RU

    Capacitor works.

    2019-09-21
    E**x
    E**x
    CA

    Love these efficient controllers

    2019-07-02
***et Europe
MOSFET DRVR 2.5A 1-OUT Hi/Low Side Inv/Non-Inv 16-Pin SOIC T/R
***as Instruments
High-CMTI 2.5-A / 5-A reinforced isolated IGBT, MOSFET gate driver with active protection feature 16-SOIC -40 to 125
***ical
Driver 5A 1-OUT High Side Inv/Non-Inv 16-Pin SOIC T/R
***i-Key
DGTL ISO 5.7KV GATE DRVR 16SOIC
***ark
Iso Gate Driver
***AS INSRUMENTS
The ISO5851-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.
***AS INSTRUMENTS INCORPORATED
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off.
***AS INST
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.
***AS INSTR
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.
***AS INSRUMENT
When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.
***AS INSRUMENTS
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.
***AS INSTRUM
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low; otherwise, this output is high.
***NS
The ISO5851-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
ISO5851/ISO5851-Q1 IGBT/MOSFET Gate Driver
OMO Electronic ISO5851/ISO5851-Q1 Isolated IGBT/MOSFET Gate Driver is a 5.7kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5A source and 5A sink current. The input side operates from a single 3V to 5.5V supply. The output side allows for a supply range from minimum 15V to maximum 30V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76ns assures accurate control of the output stage. Typical applications include industrial motor control drives, industrial power supplies, solar inverters, HEV and EV power modules, and induction heating. The ISO5851-Q1 devices are AEC-Q100 qualified for automotive applications.
モデル 説明 ストック 価格
ISO5851DWR
DISTI # 26643347
Driver 5A 1-OUT Hi Side Inv/Non-Inv 16-Pin SOIC T/R
RoHS: Compliant
4000
  • 2000:$2.5619
ISO5851DWR
DISTI # 296-42340-1-ND
DGTL ISO 5.7KV GATE DRVR 16SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1061In Stock
  • 1000:$2.9186
  • 500:$3.4606
  • 100:$4.0652
  • 10:$4.9620
  • 1:$5.5200
ISO5851DWR
DISTI # 296-42340-6-ND
DGTL ISO 5.7KV GATE DRVR 16SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1061In Stock
  • 1000:$2.9186
  • 500:$3.4606
  • 100:$4.0652
  • 10:$4.9620
  • 1:$5.5200
ISO5851DWR
DISTI # 296-42340-2-ND
DGTL ISO 5.7KV GATE DRVR 16SOIC
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$2.6919
ISO5851DWR
DISTI # ISO5851DWR
MOSFET DRVR 2.5A 1-OUT Hi/Low Side Inv/Non-Inv 16-Pin SOIC T/R - Tape and Reel (Alt: ISO5851DWR)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$2.8900
  • 4000:$2.6900
  • 8000:$2.6900
  • 12000:$2.5900
  • 20000:$2.4900
ISO5851DWR
DISTI # ISO5851DWR
MOSFET DRVR 2.5A 1-OUT Hi/Low Side Inv/Non-Inv 16-Pin SOIC T/R (Alt: ISO5851DWR)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Europe - 0
  • 2000:€3.2900
  • 4000:€2.8900
  • 8000:€2.5900
  • 12000:€2.4900
  • 20000:€2.3900
ISO5851DWRHigh-CMTI 2.5-A / 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Active Protection Features2000
  • 1000:$2.3000
  • 750:$2.3500
  • 500:$2.7100
  • 250:$3.1200
  • 100:$3.3400
  • 25:$3.7200
  • 10:$3.9900
  • 1:$4.4300
ISO5851DWR
DISTI # 595-ISO5851DWR
Gate Drivers Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125
RoHS: Compliant
2346
  • 1:$5.3600
  • 10:$4.8200
  • 100:$3.9400
  • 250:$3.7000
  • 500:$3.3600
  • 1000:$2.8300
  • 2000:$2.6900
ISO5851DW
DISTI # 595-ISO5851DW
Gate Drivers Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125
RoHS: Compliant
80
  • 1:$6.4300
  • 10:$5.7800
  • 100:$4.7300
  • 250:$4.4400
  • 500:$4.0300
  • 1000:$3.4000
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Switching Voltage Regulators DB Auto SOIC
AA1206JR-070RL

Mfr.#: AA1206JR-070RL

OMO.#: OMO-AA1206JR-070RL

Thick Film Resistors - SMD ZERO Ohm ANTI SULFUR AEC-Q200
APT2012LZGCK

Mfr.#: APT2012LZGCK

OMO.#: OMO-APT2012LZGCK

Standard LEDs - SMD 2.0X1.2MM LOW CRNT
ISO5851EVM

Mfr.#: ISO5851EVM

OMO.#: OMO-ISO5851EVM-TEXAS-INSTRUMENTS

EVAL BOARD FOR ISO5851
APT2012LZGCK

Mfr.#: APT2012LZGCK

OMO.#: OMO-APT2012LZGCK-KINGBRIGHT

Standard LEDs - SMD 2.0X1.2MM LOW CRNT
CRCW060382K0FKEAC

Mfr.#: CRCW060382K0FKEAC

OMO.#: OMO-CRCW060382K0FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 82K 1% ET1
CRCW08050000Z0EAC

Mfr.#: CRCW08050000Z0EAC

OMO.#: OMO-CRCW08050000Z0EAC-VISHAY-DALE

D12/CRCW0805-C 0R0 ET1 E3
可用性
ストック:
Available
注文中:
1985
数量を入力してください:
ISO5851DWRの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$5.36
$5.36
10
$4.82
$48.20
100
$3.94
$394.00
250
$3.70
$925.00
500
$3.36
$1 680.00
1000
$2.83
$2 830.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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