APT25GP120BDQ1G

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-247-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

1.2 kV

Collector-Emitter Saturation Voltage:

3.3 V

Maximum Gate Emitter Voltage:

30 V

Continuous Collector Current at 25 C:

69 A

Pd - Power Dissipation:

417 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Tube

Continuous Collector Current Ic Max:

69 A

Height:

5.31 mm

Length:

21.46 mm

Operating Temperature Range:

- 55 C to + 150 C

Width:

16.26 mm

Brand:

Microchip / Microsemi

Continuous Collector Current:

69 A

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

1

Subcategory:

IGBTs

Unit Weight:

1.340411 oz

Tags

APT25GP120BD, APT25GP1, APT25GP, APT25G, APT25, APT2, APT