STGWT20IH125DF

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-3P

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

1.25 kV

Collector-Emitter Saturation Voltage:

2.55 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

40 A

Pd - Power Dissipation:

259 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Series:

STGWT20IH125DF

Packaging:

Tube

Continuous Collector Current Ic Max:

20 A

Brand:

STMicroelectronics

Gate-Emitter Leakage Current:

250 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

300

Subcategory:

IGBTs

Unit Weight:

0.238311 oz

Tags

STGWT20, STGWT2, STGWT, STGW, STG