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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| SGD02N60BUMA1 DISTI # SGD02N60BUMA1TR-ND | Infineon Technologies AG | IGBT 600V 6A 30W TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| IXGH32N60B DISTI # IXGH32N60B-ND | IXYS Corporation | IGBT 600V 60A 200W TO247AD RoHS: Compliant Min Qty: 30 Container: Bulk | Limited Supply - Call | |
| IXGH32N60BU1 DISTI # IXGH32N60BU1-ND | IXYS Corporation | IGBT 600V 60A 200W TO247AD RoHS: Compliant Min Qty: 30 Container: Bulk | Limited Supply - Call | |
| HGTG12N60B3 DISTI # HGTG12N60B3-ND | ON Semiconductor | IGBT 600V 27A 104W TO247 RoHS: Compliant Min Qty: 300 Container: Tube | Limited Supply - Call | |
| IXGA12N60B DISTI # IXGA12N60B-ND | IXYS Corporation | IGBT 600V 24A 100W TO263AA RoHS: Compliant Min Qty: 50 Container: Tube | Limited Supply - Call | |
| IXGA12N60BD1 DISTI # IXGA12N60BD1-ND | IXYS Corporation | IGBT 600V 24A 100W TO263AA RoHS: Compliant Min Qty: 50 Container: Tube | Limited Supply - Call | |
| IXGH12N60B DISTI # IXGH12N60B-ND | IXYS Corporation | IGBT 600V 24A 100W TO247AD RoHS: Compliant Min Qty: 30 Container: Tube | Limited Supply - Call | |
| IXGH12N60BD1 DISTI # IXGH12N60BD1-ND | IXYS Corporation | IGBT 600V 24A 100W TO247AD RoHS: Compliant Min Qty: 30 Container: Tube | Limited Supply - Call | |
| IXGH32N60BD1 DISTI # IXGH32N60BD1-ND | IXYS Corporation | IGBT 600V 60A 200W TO247AD RoHS: Compliant Min Qty: 30 Container: Tube | Limited Supply - Call | |
| IXGP12N60B DISTI # IXGP12N60B-ND | IXYS Corporation | IGBT 600V 24A 100W TO220AB RoHS: Compliant Min Qty: 50 Container: Tube | Limited Supply - Call | |
| IXGH72N60B3 DISTI # IXGH72N60B3-ND | IXYS Corporation | IGBT 600V 75A 540W TO247 RoHS: Compliant Min Qty: 30 Container: Tube | Temporarily Out of Stock |
|
| IXGT72N60B3 DISTI # IXGT72N60B3-ND | IXYS Corporation | IGBT 600V 75A 540W TO268 RoHS: Compliant Min Qty: 30 Container: Tube | Temporarily Out of Stock |
|
| IXGX72N60B3H1 DISTI # IXGX72N60B3H1-ND | IXYS Corporation | IGBT 600V 75A 540W PLUS247 RoHS: Compliant Min Qty: 30 Container: Tube | Temporarily Out of Stock |
|
| IXGK72N60B3H1 DISTI # IXGK72N60B3H1-ND | IXYS Corporation | IGBT 600V 75A 540W TO264 RoHS: Compliant Min Qty: 25 Container: Tube | Temporarily Out of Stock |
|
| IXGR72N60B3H1 DISTI # IXGR72N60B3H1-ND | IXYS Corporation | IGBT 600V 75A 200W ISOPLUS247 RoHS: Compliant Min Qty: 30 Container: Tube | Temporarily Out of Stock |
|
| SGD02N60BUMA1 DISTI # SP000011993 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 6A 3-Pin TO-252 T/R (Alt: SP000011993) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 2500 |
|
| SSR2N60BTM DISTI # SSR2N60BTM | ON Semiconductor | - Bulk (Alt: SSR2N60BTM) RoHS: Not Compliant Min Qty: 1924 Container: Bulk | Americas - 0 |
|
| SGD02N60XT DISTI # SGD02N60BUMA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SGD02N60BUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| HGTG12N60B3D DISTI # HGTG12N60B3D | Renesas Electronics Corporation | - Bulk (Alt: HGTG12N60B3D) RoHS: Not Compliant Min Qty: 163 Container: Bulk | Americas - 0 |
|
| IXGH72N60B3 DISTI # 02AC9827 | IXYS Corporation | IGBT, SINGLE, N-CH, 600V, 75A, TO-247AD,DC Collector Current:75A,Collector Emitter Saturation Voltage Vce(on):1.51V,Power Dissipation Pd:540W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247AD,No. of RoHS Compliant: Yes | 0 |
|
| MGPM32N-60B-XC8 DISTI # E1839964 | SMC Corporation of America | CYL,GUIDE,SLIDE,ADJ STK/EXT RoHS: Not Compliant | 0 |
|
| IXGR72N60B3H1 DISTI # 747-IXGR72N60B3H1 | IXYS Corporation | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode RoHS: Compliant | 79 |
|
| IXGX72N60B3H1 DISTI # 747-IXGX72N60B3H1 | IXYS Corporation | IGBT Transistors 72 Amps 600V RoHS: Compliant | 40 |
|
| IXGH72N60B3 DISTI # 747-IXGH72N60B3 | IXYS Corporation | IGBT Transistors 72 Amps 600V 1.7 Rds RoHS: Compliant | 87 |
|
| IXGT72N60B3 DISTI # 747-IXGT72N60B3 | IXYS Corporation | IGBT Modules GenX3 B3-Class IGBTs | 0 |
|
| SGD02N60BUMA1 DISTI # N/A | Infineon Technologies AG | IGBT Transistors IGBT PRODUCTS | 0 | |
| SSP2N60B DISTI # 512-SSP2N60B | ON Semiconductor | MOSFET N-Ch/600V/2a/5Ohm RoHS: Compliant | 0 | |
| SSS2N60B DISTI # 512-SSS2N60B | ON Semiconductor | MOSFET N-Ch/600V/1.3a/5Ohm RoHS: Compliant | 0 | |
| IXGH32N60B DISTI # 747-IXGH32N60B | IXYS Corporation | IGBT Transistors 60 Amps 600V 2.3 Rds RoHS: Compliant | 0 | |
| IXGA12N60B DISTI # 747-IXGA12N60B | IXYS Corporation | IGBT Transistors 24 Amps 600V 2.1 Rds RoHS: Compliant | 0 | |
| IXGH32N60BU1 DISTI # 747-IXGH32N60BU1 | IXYS Corporation | IGBT Transistors 60 Amps 600V 2.3 Rds RoHS: Compliant | 0 | |
| SSU2N60BTU DISTI # 512-SSU2N60BTU | ON Semiconductor | MOSFET N-Ch/600V/1.8a/5Ohm RoHS: Compliant | 0 | |
| SSW2N60BTM DISTI # 512-SSW2N60BTM | ON Semiconductor | MOSFET N-Ch/600V/2a/5Ohm RoHS: Compliant | 0 | |
| SSR2N60BTM DISTI # 512-SSR2N60BTM | ON Semiconductor | MOSFET N-Ch/600V/1.8a/5Ohm RoHS: Compliant | 0 | |
| IXGH32N60BD1 DISTI # 747-IXGH32N60BD1 | IXYS Corporation | IGBT Transistors 60 Amps 600V 2.3 Rds RoHS: Compliant | 0 | |
| HGTG12N60B3 DISTI # 512-HGTG12N60B3 | ON Semiconductor | Motor / Motion / Ignition Controllers & Drivers 12A 600V UFS N-Ch RoHS: Compliant | 0 | |
| IXGR72N60B3H1 | IXYS Corporation | IXGR Series 600 Vce 75 A 32 ns t(on) GenX3 IGBT w/Diode - ISOPLUS-247 RoHS: Compliant | 1530Tube |
|
| SSP2N60B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 374000 |
|
| SSR2N60B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant | 5000 |
|
| SSR2N60BTF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 196048 |
|
| SSR2N60BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 726 |
|
| SSS2N60B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 3094 |
|
| SSU2N60BTU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 1869 |
|
| SSW2N60BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 4632 |
|
| HGT1S12N60B3 | Harris Semiconductor | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA RoHS: Not Compliant | 917 |
|
| HGT1S12N60B3D | Harris Semiconductor | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA RoHS: Not Compliant | 400 |
|
| HGT1S12N60B3DS | Harris Semiconductor | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 1100 |
|
| HGT1S12N60B3S | Harris Semiconductor | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 1600 |
|
| HGTG12N60B3D | Harris Semiconductor | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Not Compliant | 1 |
|
| IXGH72N60B3 DISTI # 7917413P | IXYS Corporation | IGBT 600V 72A GENX3 B3 LOW VSAT TO247, TU | 153 |
|
| IXGH72N60B3 DISTI # 7917413 | IXYS Corporation | IGBT 600V 72A GENX3 B3 LOW VSAT TO247, EA | 72 |
|
| IXGH72N60B3 DISTI # 2674774 | IXYS Corporation | IGBT, SINGLE, N-CH, 600V, 75A, TO-247AD RoHS: Compliant | 0 |
|
| IXGR72N60B3H1 DISTI # XSFP00000050856 | IXYS Corporation | RoHS: Compliant | 1230 in Stock0 on Order |
|
| SGD02N60BUMA1 DISTI # XSKDRABS0016926 | Infineon Technologies AG | SmallSignalField-EffectTransistor,4.5AI(D),20V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 7500 in Stock0 on Order |
|
| Image | Part # | Description |
|---|---|---|
|
|
Mfr.#: 2N3117 OMO.#: OMO-2N3117 |
Bipolar Transistors - BJT NPN Low Lvl SS |
|
|
Mfr.#: 2N2368 OMO.#: OMO-2N2368 |
Bipolar Transistors - BJT NPN Fast SW SS |
|
Mfr.#: 2N5432-2 OMO.#: OMO-2N5432-2 |
JFET FIELD EFFECT TRANSISTOR |
|
Mfr.#: 2N466 OMO.#: OMO-2N466-1190 |
New and Original |
|
Mfr.#: 2N5015 OMO.#: OMO-2N5015-MICROSEMI |
NPN SILICON TRANSISTOR |
|
Mfr.#: 2N6001-015 OMO.#: OMO-2N6001-015-1190 |
New and Original |
|
Mfr.#: 2N6178 OMO.#: OMO-2N6178-1190 |
New and Original |
|
|
Mfr.#: 2N7002E-T1-E3 OMO.#: OMO-2N7002E-T1-E3-VISHAY |
MOSFET N-CH 60V 240MA SOT-23 |
|
Mfr.#: 2N4859JTXL02 OMO.#: OMO-2N4859JTXL02-VISHAY |
JFET N-CH 30V 360MW TO-18 |
|
Mfr.#: 2N3819_NL OMO.#: OMO-2N3819-NL-1190 |
N-Channel JFET 0.05A |