TK560A65Y,S4X

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220SIS-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

7 A

Rds On - Drain-Source Resistance:

430 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

14.5 nC

Minimum Operating Temperature:

-

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

30 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

DTMOSV

Packaging:

Tube

Series:

TK560A65Y

Transistor Type:

1 N-Channel

Brand:

Toshiba

Fall Time:

8 ns

Product Type:

MOSFET

Rise Time:

20 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

105 ns

Typical Turn-On Delay Time:

50 ns

Unit Weight:

0.068784 oz

Tags

TK560A65, TK560A, TK560, TK56, TK5