DMN10H220LE-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-223-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

2.3 A

Rds On - Drain-Source Resistance:

220 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.7 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

8.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.8 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN10

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

-

Fall Time:

3.6 ns

Product Type:

MOSFET

Rise Time:

8.2 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

7.9 ns

Typical Turn-On Delay Time:

6.8 ns

Unit Weight:

0.009171 oz

Tags

DMN10H2, DMN10H, DMN10, DMN1, DMN