CSD16410Q5A

Product Attribute

Attribute Value

Manufacturer:

Texas Instruments

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

VSONP-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

25 V

Id - Continuous Drain Current:

60 A

Rds On - Drain-Source Resistance:

9.6 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.9 V

Vgs - Gate-Source Voltage:

16 V

Qg - Gate Charge:

3.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

NexFET

Packaging:

Reel

Height:

1 mm

Length:

6 mm

Series:

CSD16410Q5A

Transistor Type:

1 N-Channel

Width:

4.9 mm

Brand:

Texas Instruments

Forward Transconductance - Min:

38 S

Fall Time:

3.6 ns

Product Type:

MOSFET

Rise Time:

10.7 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

6.5 ns

Typical Turn-On Delay Time:

6.2 ns

Unit Weight:

0.003527 oz

Tags

CSD16410, CSD1641, CSD164, CSD16, CSD1, CSD