BSS169H6327XT

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PG-SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

90 mA

Rds On - Drain-Source Resistance:

6 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.9 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

2.1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

360 mW

Configuration:

Single

Channel Mode:

Depletion

Qualification:

AEC-Q101

Packaging:

Reel

Height:

1.1 mm

Length:

2.9 mm

Product:

MOSFET Small Signal

Series:

BSS169

Transistor Type:

1 N-Channel

Type:

SIPMOS Small Signal Transistor

Width:

1.3 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

0.1 S

Fall Time:

27 ns

Product Type:

MOSFET

Rise Time:

2.7 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

11 ns

Typical Turn-On Delay Time:

2.9 ns

Part # Aliases:

BSS169 BSS169H6327XTSA1 H6327 SP000702572

Unit Weight:

0.000282 oz

Tags

BSS169H63, BSS169H, BSS169, BSS16, BSS1, BSS