S29GL01GS11DHI010

S29GL01GS11DHI010
Mfr. #:
S29GL01GS11DHI010
メーカー:
Cypress Semiconductor
説明:
NOR Flash 1G 3V 100ns Parallel NOR Flash
ライフサイクル:
メーカー新製品
データシート:
S29GL01GS11DHI010 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
S29GL01GS11DHI010 詳しくは S29GL01GS11DHI010 Product Details
製品属性
属性値
メーカー:
サイプレスセミコンダクタ
製品カテゴリ:
NORフラッシュ
JBoss:
Y
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
FBGA-64
シリーズ:
S29GL01G/512/256/128S
メモリー容量:
1 Gbit
インターフェイスタイプ:
平行
組織:
64 M x 16
タイミングタイプ:
非同期
データバス幅:
16 bit
供給電圧-最小:
2.7 V
供給電圧-最大:
3.6 V
供給電流-最大:
100 mA
最低動作温度:
- 40 C
最高作動温度:
+ 85 C
包装:
トレイ
メモリタイプ:
または
スピード:
110 ns
建築:
Eclipse
ブランド:
サイプレスセミコンダクタ
感湿性:
はい
製品タイプ:
NORフラッシュ
ファクトリーパックの数量:
260
サブカテゴリ:
メモリとデータストレージ
商標名:
MirrorBit Eclipse
単位重量:
0.301134 oz
Tags
S29GL01GS11DHI, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**r
    E**r
    BE

    ok ok++++++++++++++

    2019-06-26
    Y***v
    Y***v
    RU

    Thank you very much to the seller!!!

    2019-05-08
    N***v
    N***v
    RU

    Brilliant

    2019-08-03
    S***o
    S***o
    RU

    A set of smd transistors is excellent! Transistors often used-on the day of receipt of the parcel brought me a detail where one transistor burned off the kit. On the same day the detail was fixed-the client is happy, i too. The marking is clearly written, easy to read. There is a list of marking transistors and their abbreviated marking is very convenient. I recommend.

    2019-08-05
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
GL-S Series 1Gb (64 M x 16) 3.6 V Surface Mount Flash Memory - FBGA-64
***ow.cn
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin Fortified BGA Tray
***nell
MEMORY, FLASH, 1GB, 3V, 64FBGA; Memory Type:Flash - NOR; Memory Size:1Gbit; Memory Configuration:(Not Available); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:64; Access Time:110ns; IC Interface Type:Parallel; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
MirrorBit® NOR GL Flash Memory Device
Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
モデル メーカー 説明 ストック 価格
S29GL01GS11DHI010
DISTI # 1274-1017-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 64FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray
On Order
  • 1040:$8.0845
  • 520:$8.3633
  • 260:$8.4500
  • 100:$8.8898
  • 50:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS11DHI010
DISTI # 39T5696
Cypress SemiconductorFLASH MEMORY, 1024MBIT, 110NS, 64-BGA,Flash Memory Type:Parallel NOR,Memory Size:1Gbit,Flash Memory Configuration:64M x 16bit,IC Interface Type:Parallel,Memory Case Style:FBGA,No. of Pins:64Pins,Clock Frequency:- , RoHS Compliant: Yes0
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS11DHI010
DISTI # 797-S29GL01GS11DHI01
Cypress SemiconductorNOR Flash 1G 3V 100ns Parallel NOR Flash
RoHS: Compliant
15
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS11DHI010Spansion 
RoHS: Not Compliant
60
  • 1000:$9.9900
  • 500:$10.5100
  • 100:$10.9400
  • 25:$11.4100
  • 1:$12.2900
S29GL01GS11DHI010Cypress SemiconductorGL-S Series 1Gb (64 M x 16) 3.6 V Surface Mount Flash Memory - FBGA-64
RoHS: Compliant
733Tray
  • 2:$9.0800
  • 5:$8.8300
  • 30:$8.5800
  • 60:$8.2500
S29GL01GS11DHI010
DISTI # 2340555
Cypress SemiconductorMEMORY, FLASH, 1GB, 3V, 64FBGA
RoHS: Compliant
230
  • 1:$15.2400
  • 10:$14.1100
  • 25:$13.7900
S29GL01GS11DHI010
DISTI # 2340555
Cypress SemiconductorMEMORY, FLASH, 1GB, 3V, 64FBGA
RoHS: Compliant
230
  • 1:£9.8100
  • 10:£8.4300
  • 25:£8.2400
S29GL01GS11DHI010
DISTI # XSFP00000141797
CYPRESS SEMICONDUCTORFlash, 128MX8, 110ns, PBGA64
RoHS: Compliant
493
  • 260:$12.1100
  • 493:$11.3500
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可用性
ストック:
380
注文中:
2363
数量を入力してください:
S29GL01GS11DHI010の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$9.62
$9.62
10
$8.90
$89.00
25
$8.70
$217.50
50
$8.65
$432.50
100
$7.82
$782.00
250
$7.65
$1 912.50
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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