Jan2N5582/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-46-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

75 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

1 V

Maximum DC Collector Current:

800 mA

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

300 at 150 mA, 10 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

30 at 500 mA, 10 V

Pd - Power Dissipation:

500 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

Jan2N55, Jan2N5, Jan2N, Jan2, JAN