FDMA410NZT

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

UMLP-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

9.5 A

Rds On - Drain-Source Resistance:

60 mOhms

Vgs th - Gate-Source Threshold Voltage:

400 mV

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

10 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.4 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.55 mm

Length:

2.05 mm

Series:

FDMA410NZT

Transistor Type:

1 N-Channel

Width:

2.05 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

36 S

Fall Time:

3.3 ns

Product Type:

MOSFET

Rise Time:

3 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

27 ns

Typical Turn-On Delay Time:

8.5 ns

Unit Weight:

0.001411 oz

Tags

FDMA41, FDMA4, FDMA, FDM