IGW30N100TFKSA1

Mfr. #:: IGW30N100TFKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
Lifecycle:: New from this manufacturer.
Datasheet:: IGW30N100TFKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1000 V

Collector-Emitter Saturation Voltage:: 1.8 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 60 A

Pd - Power Dissipation:: 412 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Series:: TRENCHSTOP IGBT

Packaging:: Tube

Continuous Collector Current Ic Max:: 30 A

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 600 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IGW30N100T IGW3N1TXK SP000380845

Unit Weight:: 0.014110 oz

Tags: IGW30N1, IGW30N, IGW3, IGW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGW30N100TFKSA1 Description

***ical: TransIGBTChipNCH1000V60A412000mWAutomotive3Pin3TabTO247Tube

***ark: TransistorIgbt1Kv60ATo247;DcCollectorCurrent60A;CollectorEmitterSaturationVoltageVceOn155V;PowerDissipationPd412W;CollectorEmitterVoltageVBrCeo1Kv;TransistorCaseStyleto247;NoOfPins3Pins;RohsCompliantYes

***ineon: InfineonsTRENCHSTOPIGBTtechnologyleadstosignificantimprovementofstaticaswellasdynamicperformanceofthedeviceduetocombinationoftrenchtopcellandfiledstopconceptCombinationofIGBTwithsoftrecoveryEmitterControlledDiodefurtherminimizestheturnonlossesThehighestefficiencyisreachedduetothebestcompromisebetweenswitchingandconductionlossesSummaryofFeaturesLowestVcesatdropforlowerconductionlosses;Lowswitchinglosses;EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVcesat;VerysoftfastrecoveryantiparallelEmitterControlledDiode;Highruggednesstemperaturestablebehavior;LowEMIemissions;Lowgatecharge;VerytightparameterdistributionBenefitsHighestefficiencylowconductionandswitchinglosses;Comprehensiveportfolioin600Vand1200Vforflexibilityofdesign;HighdevicereliabilityTargetApplicationsUPS;SolarInverters;MajorHomeAppliances;Welding;Airconditioning;IndustrialDrives;Otherhardswitchingapplications

Market price

Part #	Mfg.	Description	Stock	Price
IGW30N100TFKSA1 DISTI # V99:2348_06378671	Infineon Technologies AG	Trans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	244	100:$3.9750 10:$4.6210 1:$6.0313
IGW30N100TFKSA1 DISTI # IGW30N100TFKSA1-ND	Infineon Technologies AG	IGBT 1000V 60A 412W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IGW30N100TFKSA1 DISTI # 26197476	Infineon Technologies AG	Trans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	244	3:$6.0313
IGW30N100TFKSA1 DISTI # 13AC9000	Infineon Technologies AG	TRANSISTOR, IGBT, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:412W,Collector Emitter Voltage V(br)ceo:1kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	0
IGW30N100T DISTI # 726-IGW30N100T	Infineon Technologies AG	IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech RoHS: Compliant	153	1:$5.5100 10:$4.6800 100:$4.0600 250:$3.8500 500:$3.4600
IGW30N100TFKSA1 DISTI # 726-IGW30N100TFKSA1	Infineon Technologies AG	IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech RoHS: Compliant	118	1:$5.5100 10:$4.6800 100:$4.0600 250:$3.8500 500:$3.4600
IGW30N100TFKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant	69	1000:$2.3700 500:$2.4900 100:$2.6000 25:$2.7100 1:$2.9200

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Availability

Stock:: 115
On Order:: 2098
Enter Quantity:

Current price of IGW30N100TFKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Start with

IGW30N1 4
IGW30N 17
IGW3 18
IGW 137

IGW30N100TFKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes