PSMN1R5-30BLEJ

Mfr. #:: PSMN1R5-30BLEJ
メーカー:: Nexperia
説明:: MOSFET N-CH 30V 120A D2PAK
ライフサイクル:: メーカー新製品
データシート:: PSMN1R5-30BLEJ データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: PSMN1R5-30BLEJ 詳しくは

製品属性
属性値

メーカー: NXPセミコンダクターズ

製品カテゴリ: FET-シングル

シリーズ: -

包装: Digi-ReelR代替パッケージ

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

テクノロジー: Si

作動温度: -55°C ~ 175°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: D2PAK

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 401W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 14934pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 120A (Tc)

Rds-On-Max-Id-Vgs: 1.5 mOhm @ 25A, 10V

Vgs-th-Max-Id: 2.15V @ 1mA

ゲートチャージ-Qg-Vgs: 228nC @ 10V

Pd-電力損失: 401 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 99.2 ns

立ち上がり時間: 156.1 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 120 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.7 V

Rds-On-Drain-Source-Resistance: 1.3 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 191.8 ns

典型的なターンオン遅延時間: 100.6 ns

Qg-Gate-Charge: 228 nC

チャネルモード: 強化

Tags: PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PSMN1R5-30BLEJ 説明

***peria: PSMN1R5-30BLE - N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK

***ure Electronics: Low Voltage MOSFET - 30V 120A D2PAK - SOT404 package

***p One Stop Japan: Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R

***i-Key: MOSFET N-CH 30V D2PAK

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(On):1.5Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; No. Of Pins:3Pins

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C

***nell: MOSFET, CANALE N, 30V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:401W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C

PSMN1R5-30BLEJ 詳しくは

PSMN N-Channel MOSFETs: Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

Market price

モデル	メーカー	説明	ストック	価格
PSMN1R5-30BLEJ DISTI # V36:1790_06540853	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R	0
PSMN1R5-30BLEJ DISTI # V72:2272_06540853	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R	0
PSMN1R5-30BLEJ DISTI # 1727-1101-1-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	332In Stock	100:$2.0996 10:$2.6120 1:$2.9100
PSMN1R5-30BLEJ DISTI # 1727-1101-6-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	332In Stock	100:$2.0996 10:$2.6120 1:$2.9100
PSMN1R5-30BLEJ DISTI # 1727-1101-2-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	On Order	1600:$1.4430 800:$1.7110
PSMN1R5-30BLEJ DISTI # PSMN1R5-30BLEJ	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	48000:$1.2418 24000:$1.2725 14400:$1.3047 9600:$1.3386 4800:$1.3562
PSMN1R5-30BLEJ DISTI # PSMN1R5-30BLEJ	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0
PSMN1R5-30BLEJ. DISTI # 23AC9025	Nexperia	Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins	0	48000:$1.2500 24000:$1.2800 14400:$1.3100 9600:$1.3400 1:$1.3600
PSMN1R5-30BLEJ DISTI # 771-PSMN1R5-30BLEJ	Nexperia	MOSFET N-channel 30 V 1.5 mo FET RoHS: Compliant	3854	1:$2.7200 10:$2.3100 100:$2.0100 250:$1.9000 500:$1.7100 800:$1.4400 2400:$1.3700 4800:$1.3200
PSMN1R5-30BLEJ DISTI # 2281225	Nexperia	MOSFET, N-CH, 30V, 120A, D2PAK RoHS: Compliant	0	2500:$2.0900 1000:$2.2000 500:$2.3100 250:$2.4300 100:$2.5800 25:$2.8000 10:$3.1300 1:$3.4600
PSMN1R5-30BLEJ DISTI # 2281225	Nexperia	MOSFET, N-CH, 30V, 120A, D2PAK RoHS: Compliant	0	500:£1.1100 250:£1.4600 100:£1.5600 10:£1.7800 1:£2.3700

画像	モデル	説明
	Mfr.#: PSMN1R5-40ES,127 OMO.#: OMO-PSMN1R5-40ES-127	MOSFET N-Ch 40V 1.6 mOhms
	Mfr.#: PSMN1R5-30YL,115 OMO.#: OMO-PSMN1R5-30YL-115-NEXPERIA	MOSFET N-CH 30V LFPAK
	Mfr.#: PSMN1R5-25YL OMO.#: OMO-PSMN1R5-25YL-1190	ブランドニューオリジナル
	Mfr.#: PSMN1R5-30BLE118 OMO.#: OMO-PSMN1R5-30BLE118-1190	Now Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: PSMN1R5-30YL115 OMO.#: OMO-PSMN1R5-30YL115-1190	Now Nexperia PSMN1R5-30YL - Power Field-Effect Transistor, 100A I(D), 35V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
	Mfr.#: PSMN1R5-30YLC,115 OMO.#: OMO-PSMN1R5-30YLC-115-NEXPERIA	MOSFET N-CH 30V 100A LFPAK
	Mfr.#: PSMN1R5-30YLC.115 OMO.#: OMO-PSMN1R5-30YLC-115-1190	Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R5-30YLC,115)
	Mfr.#: PSMN1R5-30YLC115 OMO.#: OMO-PSMN1R5-30YLC115-1190	- Bulk (Alt: PSMN1R5-30YLC115)
	Mfr.#: PSMN1R5-25YL,115 OMO.#: OMO-PSMN1R5-25YL-115-NEXPERIA	IGBT Transistors MOSFET N-CH TRENCHMOS Logic level FET
	Mfr.#: PSMN1R5-40PS,127 OMO.#: OMO-PSMN1R5-40PS-127-NEXPERIA	MOSFET N-CH 40V 120A TO220AB

PSMN1R5-30BLEJ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes