STP11NM60N

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

370 mOhms

Vgs - Gate-Source Voltage:

25 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

90 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

9.15 mm

Length:

10.4 mm

Series:

STB11NM60

Transistor Type:

1 N-Channel

Type:

Power MOSFET

Width:

4.6 mm

Brand:

STMicroelectronics

Forward Transconductance - Min:

7.5 S

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

18.5 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

50 ns

Typical Turn-On Delay Time:

22 ns

Unit Weight:

0.011640 oz

Tags

STP11NM60N, STP11NM60, STP11NM6, STP11NM, STP11N, STP11, STP1, STP