IPB60R199CPATMA1

Mfr. #:: IPB60R199CPATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
Lifecycle:: New from this manufacturer.
Datasheet:: IPB60R199CPATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPB60R199CPATMA1 Datasheet IPB60R199CPATMA1 Datasheet (P4-P6)IPB60R199CPATMA1 Datasheet (P7-P9)IPB60R199CPATMA1 Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 16 A

Rds On - Drain-Source Resistance:: 180 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 43 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 139 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: CoolMOS CE

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 50 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: IPB60R199CP IPB6R199CPXT SP000223256

Unit Weight:: 0.139332 oz

Tags: IPB60R199CPA, IPB60R199CP, IPB60R199, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R199CPATMA1 Description

***ure Electronics: Single N-Channel 650 V 199 mOhm 32 nC CoolMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) D2PAK T/R

***et Europe: Trans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R

***Components: MOSFET N-Channel 650V 16A CoolMOS TO263

***an P&S: 600V,16A,N channel Power MOSFET

*** Source Electronics: MOSFET N-CH 650V 16A TO-263

***ronik: N-CH 600V 16A 199mOhm TO263

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.18Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:139W; No. Of Pins:3Pins Rohs Compliant: Yes

***nell: MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:16A; On State Resistance:0.199ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride

***ment14 APAC: MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:139W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-263; Power Dissipation Pd:139W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

Market price

Part #	Mfg.	Description	Stock	Price
IPB60R199CPATMA1 DISTI # V72:2272_06376919	Infineon Technologies AG	Trans MOSFET N-CH 650V 16A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	989	500:$2.0890 250:$2.3120 100:$2.4270 25:$2.7080 10:$2.7610 1:$3.2020
IPB60R199CPATMA1 DISTI # V36:1790_06376919	Infineon Technologies AG	Trans MOSFET N-CH 650V 16A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB60R199CPATMA1 DISTI # IPB60R199CPATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 16A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	982In Stock	500:$2.4392 100:$3.0123 10:$3.6730 1:$4.1100
IPB60R199CPATMA1 DISTI # IPB60R199CPATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 16A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	982In Stock	500:$2.4392 100:$3.0123 10:$3.6730 1:$4.1100
IPB60R199CPATMA1 DISTI # IPB60R199CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 16A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$1.9972
IPB60R199CPATMA1 DISTI # 32333364	Infineon Technologies AG	Trans MOSFET N-CH 650V 16A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	3000	1000:$1.8005
IPB60R199CPATMA1 DISTI # 31748993	Infineon Technologies AG	Trans MOSFET N-CH 650V 16A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	989	500:$2.0890 250:$2.3110 100:$2.4270 25:$2.7080 10:$2.7610 4:$3.2020
IPB60R199CPXT DISTI # IPB60R199CPATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.7900 2000:$1.7900 4000:$1.6900 6000:$1.5900 10000:$1.5900
IPB60R199CPATMA1. DISTI # 27AC6720	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:139W,No. of Pins:3Pins RoHS Compliant: Yes	0	6000:$1.5900 4000:$1.6900 1:$1.7900
IPB60R199CPATMA1 DISTI # 726-IPB60R199CPATMA1	Infineon Technologies AG	MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP RoHS: Compliant	940	1:$3.4300 10:$2.9100 100:$2.5300 250:$2.4000 500:$2.1500 1000:$1.8100 2000:$1.7200
IPB60R199CP DISTI # 726-IPB60R199CP	Infineon Technologies AG	MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP RoHS: Compliant	931	1:$3.4300 10:$2.9100 100:$2.5300 250:$2.4000 500:$2.1500 1000:$1.8100 2000:$1.7200
IPB60R199CPATMA1 DISTI # 1664018	Infineon Technologies AG	MOSFET, N, TO-263 RoHS: Compliant	0	500:$3.2400 250:$3.6200 100:$3.8100 10:$4.3900 1:$5.1700
IPB60R199CPATMA1 DISTI # 1664018	Infineon Technologies AG	MOSFET, N, TO-263 RoHS: Compliant	3	500:£1.6700 250:£1.8700 100:£1.9700 10:£2.2600 1:£3.0000

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Availability

Stock:: Available
On Order:: 1000
Enter Quantity:

Current price of IPB60R199CPATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.43~~; ~~$3.43~~

10: ~~$2.91~~; ~~$29.10~~

100: ~~$2.53~~; ~~$253.00~~

250: ~~$2.40~~; ~~$600.00~~

500: ~~$2.15~~; ~~$1 075.00~~

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IPB60R199CPATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes