SISH129DN-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-1212-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

35 A

Rds On - Drain-Source Resistance:

11.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.8 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

71 nC

Minimum Operating Temperature:

- 50 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

52.1 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET, PowerPAK

Packaging:

Reel

Series:

SIS

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

37 S

Fall Time:

14 ns

Product Type:

MOSFET

Rise Time:

43 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

50 ns

Tags

SISH1, SISH, SIS