DMT6007LFG-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerDI3333-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

4.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

800 mV

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

41.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.2 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMT6007

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

100 S

Fall Time:

9.7 ns

Product Type:

MOSFET

Rise Time:

4.3 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

23.4 ns

Typical Turn-On Delay Time:

5.7 ns

Tags

DMT6007LFG, DMT6007, DMT600, DMT60, DMT6, DMT