QS8K13TCR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSMT-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

6 A

Rds On - Drain-Source Resistance:

20 mOhms, 20 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

20 nC, 20 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.5 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

2 N-Channel

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

3 S, 3 S

Fall Time:

7 ns, 7 ns

Product Type:

MOSFET

Rise Time:

40 ns, 40 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

35 ns, 35 ns

Typical Turn-On Delay Time:

8 ns, 8 ns

Part # Aliases:

QS8K13

Tags

QS8K1, QS8K, QS8